features for general purpose applications this diode features very low turn-on voltage and fast switching. these devices are protected mechanical data case:jedec do--35,glass case weight: approx. 0.13 gram symbols min. units 30.0 v v v v v v a pf ns /w 0.4 1) valid provided that leads at a distance of 4mm from case are kept at ambient temperature 0.5 thermal resistance junction to ambient c j 0.32 pulse test tp<300 s, <2% @ i f = 0 . 1 m a @ i f = 1 m a storage temperature range t stg reverse breakdow n voltage symbols v r 0.24 @ i f = 1 0 m a @ i f = 3 0 m a i r BAT85 by a pn junction guard ring agains t exces s ive small sign a l s c hottky d i ode v o l t a g e r a ng e : 3 0 v curr e n t : 0 . 2 a d o - 35 ( g l a ss ) voltage, s uch as electros tatic dis charges p o w e r d i ss i pat i on @ t a = 6 5 units c - 5 5 - - -+ 1 2 5 polarity: color band denotes cathode end absolute ratings v r i f i fm i fsm p tot t j t a 5 1) 125 v ma ma 30.0 200 1) 300 1) a mw max. ty p. c - 5 5 - - -+ 1 5 0 electrical characteristics junction temperature ambient operating temperature range r ja @ i f = 1 0 0 m a le a k a ge c u r r e nt v r = 2 5 v j un c t i on c ap a c i t an c e a t v r = 1 v , f = 1 m h z r e v e r se r e c o v e r y t i m e @ i f = 1 0 m a , i r = 1 0 m a , i r = 1 m a v f forw ard voltage 2.0 10 t rr 5 430 1) value 200 1) 1) valid provided that leads at a distance of 4mm from case are kept at ambient temperature continuous reverse voltage f o r w a r d c ont i nuo u s c u r r e n t @ t a = 2 5 p e a k f o r w a r d c u r r ent @ t a = 2 5 s u r g e f o r w a r d c u r r ent @ t p < 1 s , t a = 2 5 0.8 dimensions in millimeters diode semiconductor korea www.diode.kr
0 100 200 100 200 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 1000 t j =-40 t j =125 t j =25 0 5 10 15 20 25 30 0.01 0.1 1 10 100 1000 t j =125 100 75 50 25 0 5 1015 202530 2 4 6 8 10 12 14 v f - forward voltage ( v ) t a - ambient temperature ( ) v r - reverse voltage ( v ) fig. 3 -- typical reverse characteristics p to t -power ( mw ) fig.4 -- typical junction capacitance v r - reverse voltage ( v ) junction capacitance ( pf ) forward current ( ma ) reverse leaka g e current ( a ) BAT85 fig.1 -- admissible power dissipation vs. ambient temperature fig. 2--typical instantaneous forword characteristics www.diode.kr diode semiconductor korea
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